The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 1996
Filed:
Feb. 27, 1995
Applicant:
Inventors:
Kuang-Chung Cheng, Hsinchu, TW;
Meng-Jin Tsai, Kaohsiung, TW;
Ta-Chi Kuo, Hsinchu, TW;
Kuo-Jaan Su, Hsinchu, TW;
Assignee:
United Microelectronics Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257341 ; 257350 ; 257401 ; 437 46 ; 437937 ; 437941 ;
Abstract
A field effect transistor has been developed with one source and one drain but with two independent active regions. It is shown how a double switching characteristic can be obtained with this structure which is described along with a process for its manufacture.
Cheng, Kuang-Chung. (1996). Double switching field effect transistor and method of manufacturing it (U.S. Patent No. 5500545). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5500545
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