Process for formation for hetero junction structured film utilizing v

Abstract

A process for formation of a hetero junction structured film utilizing V grooves is disclosed. A monocrystalline film 1 is etched into V grooves, and thereupon, a hetero film 2 having misfits is grown, so that dislocations would be intensively distributed within the V grooves. Then, an oxide layer 3 is formed thereupon, and then, the portions of the oxide layer 3 and the hereto film 2 corresponding to the V grooves are removed by carrying out an etching. Then, the residue oxide layer is removed, thereby forming a non-stress non-dislocation hetero junction structure. Further, the following steps can be added. That is, on the above structure, a thin oxide layer 3 is deposited by carrying out a thermal oxidation or a chemical deposition, and then, a polycrystalline silicon film 4 is deposited. Then the surface irregularities are smoothened by carrying out a selective grinding. Or the following steps may be added. That is, the V groove portions of the hetero film 2 and the monocrystalline film 1 are filled with a monocrystalline film, and the residue oxide layer 3 is removed. Thus a hetero junction film can be grown in which the stress effect is minimized, and the dislocation concentration is made to be extremely low.