The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1996
Filed:
Apr. 27, 1995
Applicant:
Inventors:
Assignee:
United Microelectronics Corporation, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437231 ; 437238 ; 437240 ;
Abstract
A spin-on-glass sandwich layer planarization process where the spin-on-glass layer within the sandwich has been ion implanted through its entire thickness. The spin-on-glass sandwich layer is formed by successive deposition of a silicon oxide layer, followed by a spin-on-glass layer. The spin-on-glass layer is then thermally cured and ion implanted throughout its entire thickness. Various combinations of implanting ions, ion doses and implantation energies are used to implant the spin-on-glass layer. Finally, a second silicon oxide layer is formed upon the surface of the spin-on-glass layer to complete the spin-on-glass sandwich layer.