The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1996
Filed:
Sep. 13, 1994
Ryo Hattori, Itami, JP;
Yasutaka Kohno, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for producing a refractory metal gate electrode includes forming a patterning mask layer that is dissolved in a solution including hydrogen ions and having an aperture on a semiconductor substrate; forming a gate metal layer having an ionization potential larger than hydrogen on the entire surface of the patterning mask layer; forming a low resistance metal layer of a predetermined configuration having an ionization potential smaller than hydrogen on the gate metal layer; covering at least an upper surface of the low resistance metal layer with a film that has no reductive reaction with a solution including hydrogen ions; and removing the patterning mask layer using a solution including hydrogen ions after patterning the gate metal layer. An electrolytic reaction of a system including the gate metal layer, the low resistance metal layer, and the solution including hydrogen ions is suppressed by a film covering at least an upper surface of the low resistance metal layer, and localized abnormal dissolution of the gate metal when removing the patterning mask layer using the solution including the hydrogen ions is suppressed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile