The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 1996

Filed:

May. 16, 1994
Applicant:
Inventors:

James McDiarmid, Pleasanton, CA (US);

Kristian E Johnsgard, San Jose, CA (US);

Assignee:

AG Associates, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
117102 ; 117 84 ; 117 88 ; 118715 ; 118725 ; 118728 ;
Abstract

A CVD reactor and method for growing semiconductor material upon a selected surface of a semiconductor wafer supported within the reactor includes a plurality of heat shields that are arranged relative to the peripheral edge and underside of the wafer to alter the radiation of flux from the wafer that is heated to elevated temperatures by a bank of high-intensity lamps that are oriented to illuminate the upper side of the wafer through a transparent wall of the reactor. A reactant gas flowing into the chamber from above the wafer is inhibited from flowing about the underside of the wafer, thereby assuring wafers that are not contaminated on the underside.


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