The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 1996
Filed:
Mar. 21, 1995
Landon B Vines, San Antonio, TX (US);
Felix H Fujishiro, San Jose, CA (US);
Danny W Echtle, San Antonio, TX (US);
Annette Garcia, Pleasanton, TX (US);
VLSI Technology, Inc., San Jose, CA (US);
Abstract
A method of identifying a weakest interface where delamination is most likely to occur in a multi-layer dielectric film stack formed on a semiconductor wafer includes scribing processed layers including the multi-layer dielectric film stack with an applied force of a selected and constant magnitude, measuring the depth of a cavity formed in the processed layers by such scribing, and identifying the weakest interface by comparing the measured depth against the known depths of the interfaces between adjacent layers of the multi-layer dielectric film stack.