The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 1996

Filed:

Apr. 28, 1994
Applicant:
Inventors:

Manoocher Birang, Los Gatos, CA (US);

Jian Ding, San Jose, CA (US);

Hyman J Levinstein, Berkeley Heights, NJ (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02N / ;
U.S. Cl.
CPC ...
361234 ;
Abstract

The invention is embodied in a method of determining an optimum de-chucking voltage for nullifying residual electrostatic forces on a wafer in an electrostatic chuck for removal of the wafer from the chuck, including holding the wafer on the electrostatic chuck by applying an electrostatic potential to the chuck, introducing a gas between the wafer and the chuck, reducing the electrostatic potential of the chuck while observing a rate of leakage of the gas from between the wafer and the chuck, and recording as the optimum dechucking voltage the value of the electrostatic potential obtaining when the rate of leakage exceeds a predetermined threshold.


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