The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 1996
Filed:
Aug. 21, 1991
Katsuhiko Iizuka, Kawasaki, JP;
Fujitsu Limited, Kanagawa, JP;
Abstract
A process for the preparation of a semiconductor device, includes the steps of, (a) foxing a mask including an organic film on a laminated film consisting of a metal silicide layer and a non-single crystalline silicon layer formed over a substrate on which an oxide layer is formed, (b) etching the laminated film under a plasma atmosphere of a mixed gas including a chlorine gas and an oxygen gas by heating the substrate to a temperature of 60.degree. C. or more to fabricate the laminated film into an almost vertical pattern in section, and (c) removing the mask from the laminated film. In this process, the laminated film consisting of a metal silicide layer on which a resist mask is formed, and a polycrystalline silicon layer formed over a substrate, can be given vertical patterning profile edge, and the uniformity of the etching rate in the substrate is enhanced. Further, as a deposition gas is not used in the present process, the occurrence of loose particles is restrained.