The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 1996
Filed:
Mar. 25, 1994
Yasuhiro Horiike, Hiroshima, JP;
Takayuki Fukasawa, Yamanashi, JP;
Tokyo Electron Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor wafer plasma treatment apparatus comprising a processing vessel whose interior is maintained at a predetermined degree of vacuum; a plasma generation means which is arranged on an upper surface of the processing vessel and generates radio-frequency waves into the interior thereof, to cause the generation of a plasma in the process gas within the processing vessel; and a holder for holding a semiconductor wafer that is to be subjected to a predetermined treatment by the plasma generated from the process gas by the action of the plasma generation means, a supply means which supplies process gas into the processing vessel comprises first gas supply pipes that are arranged at positions equidistant in the peripheral direction around the processing vessel and a second gas supply pipe that is arranged at the center of an upper surface of the processing vessel, and gas exhaust means from exhaust gases from the processing vessel is arranged at positions equidistant in the peripheral direction around the processing vessel. This configuration counters any drop in the plasma density at the central portion of the processing vessel to obtain a uniformly high-density plasma, making it possible to subject large-diameter semiconductor wafers to uniform, rapid treatment.