The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 1996
Filed:
Sep. 27, 1994
Michael D Lammert, Manhattan Beach, CA (US);
TRW Inc., Redondo Beach, CA (US);
Abstract
A method of forming closely spaced metal electrodes contacting different regions of a semiconductor device is disclosed. The method includes first depositing a sacrificial layer over a developing semiconductor structure. Next, a photoresist layer is deposited over the sacrificial layer and then patterned and developed with a re-entrant profile opening. An opening in the dielectric layer is formed to expose a first semiconductor layer through the re-entrant profile using an anisotropic etch. The photoresist opening is enlarged by removing a portion of the photoresist layer. Then, a metal layer is deposited over the entire structure such that the metal contacts the first semiconductor layer and extends over a portion of the sacrificial layer. The photoresist layer, the sacrificial layer and portions of the first semiconductor layer are removed so that a first metal electrode is connected to a semiconductor region. The first electrode has a lateral extension determined by the amount the photoresist opening is enlarged. The vertical clearance between the first electrode and a second semiconductor layer is determined by the thickness of the sacrificial layer. A second metal electrode is formed by either a conventional lift-off procedure or by a conventional deposition and etch procedure.