The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 1996

Filed:

Feb. 23, 1995
Applicant:
Inventors:

Kuniyoshi Suzuki, Fukushima, JP;

Toshiaki Takaku, Fukushima, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437225 ; 437250 ; 437946 ; 148D / ;
Abstract

The single crystal silicon wafers which have undergone a treatment with a chemical liquid such as an acid or an alkali are stored without entailing contamination of their surfaces by causing the wafers to be immediately immersed, either directly or after being washed with water, in an aqueous hydrogen peroxide solution. The prevention of the contamination of surfaces of the wafers is attained effectively by setting the concentration of hydrogen peroxide in the aqueous hydrogen peroxide solution in the range of from 0.01 to 30% by weight and the temperature of the aqueous hydrogen peroxide solution at the time that the wafers are immersed in the solution in the range of from 10.degree. to 30.degree. C.


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