The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 1996
Filed:
Jan. 25, 1995
Stanislav P Bajuk, Madison, WI (US);
David S O'Grady, Jericho, VT (US);
Edward T Smith, Somerville, MA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming rim type phase-shift lithography mask (140) involving backside overexposure of a positive resist layer (130) overlying a patterned light-blocking layer (120). By subjecting the resist layer to electromagnetic radiation (132) (e.g., broad band UV) transmitted via the backside (115) of the mask substrate (112), portions (134) of the resist layer extending from peripheral edges of the light blocking layer inwardly a selected distance are activated. After developing activated portions of the resist layer, the 'pull back' of the resist layer is transferred to the underlying light blocking layer by anisotropically etching portions of the light blocking layer not covered by the resist layer, thereby forming the desired rim structure.