The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 1996

Filed:

Jun. 21, 1994
Applicant:
Inventors:

Makoto Murata, Yokkaichi, JP;

Mikio Yamachika, Yokkaichi, JP;

Yoshiji Yumoto, Yokkaichi, JP;

Takao Miura, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ; G03F / ; G03C / ;
U.S. Cl.
CPC ...
43027014 ; 430171 ; 430176 ; 430189 ; 430191 ; 430192 ; 430193 ; 430910 ; 430920 ; 430921 ; 522 31 ; 522 32 ; 522 36 ; 522 39 ; 522 63 ;
Abstract

A radiation-sensitive composition comprising (A) a polymer having a recurring unit represented by formula (1): ##STR1## wherein R.sup.1 represents a substituted methyl group, a substituted ethyl group, a silyl group, a germyl group or an alkoxycarbonyl group, and R.sup.2 represents --OR.sup.3 or --NR.sup.4 R.sup.5 in which R.sup.3 is a hydrogen atom, a straight-chain alkyl group, a cyclic alkyl group, an aryl group, an aralkyl group, a substituted methyl group, a substituted ethyl group, a silyl group, a germyl group or an alkoxycarbonyl group, and R.sup.4 and R.sup.5, which may be the same or different, are hydrogen atoms, straight-chain alkyl groups, cyclic alkyl groups, aralkyl groups or aryl groups, and (B) a radiation-sensitive acid forming agent. Said radiation-sensitive composition can be suitably used as a resist composition which enables reliable fine processing, which has high sensitivity and high resolution degree, and which is superior in dry etching resistance, develop-ability, adhesiveness, heat resistance and yield of residual film thickness.


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