The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 1995
Filed:
Sep. 27, 1994
Applicant:
Inventors:
Takeshi Tomioka, Kawasaki, JP;
Hideyasu Ando, Kawasaki, JP;
Naoya Okamoto, Kawasaki, JP;
Shinji Yamaura, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 76 ; 257200 ; 257201 ;
Abstract
The invention relates to a method for manufacturing a III-V system compound semiconductor device, provides such a new C dopant as alkyl halide (CH.sub.2 I.sub.2 for example) containing carbon (C), iodine (I), and hydrogen (H) for giving a highly p-type conductivity to a GaAs crystal layer, an InGaAs crystal layer or the like as an object of it, and includes a process of forming a p-type III-V system compound semiconductor layer as using a compound containing carbon (C) as a dopant material for giving a p-type conductivity and further containing iodine (I) and hydrogen (H) as impurity.