The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 1995

Filed:

May. 20, 1994
Applicant:
Inventors:

Toshiaki Idaka, Yokohama, JP;

Hirokazu Ezawa, Tokyo, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257786 ; 257737 ; 257780 ; 257751 ;
Abstract

Pads are formed on a semiconductor substrate and the pads are covered with a passivation film. Openings are formed in the passivation film and the pads are exposed via the openings. A barrier metal layer is formed on the bottom surface and side surface of each of the openings and the upper surface of the passivation film lying on the periphery of each of the openings. Bump electrodes are filled in the openings and project upwardly from the openings. The area of the upper surface of the bump electrode is larger than the area of the bottom surface thereof connected to the pad. The cross section of the bump electrode in a direction along the periphery of the semiconductor substrate takes a rectangular form and the cross section of the bump electrode in a direction perpendicular to the periphery of the semiconductor substrate takes a trapezium form having an upper side longer than a bottom side thereof.


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