The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 1995
Filed:
Apr. 26, 1994
Katsuhiro Kawai, Yamatotakada, JP;
Mikio Katayama, Ikoma, JP;
Sharp Kabushiki Kaisha, , JP;
Abstract
The thin film transistor of the invention includes a substrate; a gate electrode formed on the substrate; a semiconductor layer insulated from the gate electrode, the semiconductor layer being formed on the substrate to cover the gate electrode; a first contact layer and a second contact layer which are made of n-type microcrystalline silicon having a resistivity of 10 .OMEGA.cm or less, the first and second contact layers being in contact with the semiconductor layer so as cover part of the gate electrode; a source electrode which is in contact with part of the first contact layer; and a drain electrode which is in contact with part of the second contact layer.