The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 1995
Filed:
Feb. 23, 1995
Takeshi Ichikawa, Zama, JP;
Takao Yonehara, Atsugi, JP;
Masaru Sakamoto, Atsugi, JP;
Yasuhiro Naruse, Aiko, JP;
Jun Nakayama, Atsugi, JP;
Kenji Yamagata, Kawasaki, JP;
Kiyofumi Sakaguchi, Atsugi, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for producing a semiconductor article comprises the steps of preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region, forming unevenness on the surface at the side of said semiconductor layer of said first substrate; bonding the surface of said first substrate having said unevenness formed thereon to the surface of said second substrate so as to be in contact with each other, and removing said porous semiconductor under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate.