The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 1995
Filed:
Aug. 16, 1994
Takashi Shinohe, Yokohama, JP;
Kazuya Nakayama, Sagamihara, JP;
Minami Takeuchi, Tokyo, JP;
Masakazu Yamaguchi, Tokyo, JP;
Mitsuhiko Kitagawa, Tokyo, JP;
Ichiro Omura, Kawasaki, JP;
Akio Nakagawa, Hiratsuka, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.