Semiconductor memory device having a delay circuit for controlling

Abstract

A semiconductor memory circuit includes a memory cell array having a plurality of memory cells. Column selection lines constitute connection lines extending from the memory cell array and are divided into hierarchies like a tree by selecting transistors. More specifically, a column selection system is hierarchically divided into column selection lines belonging to a first-stage column decoder and a second-stage column decoder. Row selection lines are controlled by a row decoder. The semiconductor memory circuit also includes an ATD circuit for detecting a transition of an address signal to generate a pulse, a pulse width control circuit for controlling the width of the pulse to determine data in a sense amplifier, and a latch circuit for latching readout data in response to the width of the pulse. A delay circuit is provided in the first-stage column decoder of an upper hierarchy to which a small number of selecting transistors belong and from which a signal rises at high speed. The delay circuit of the first-stage column decoder causes the pulse from the ATD circuit to always operate the latch circuit earlier than the timing of transition of data in the sense amplifier, thereby latching the preceding data.