The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 1995
Filed:
Aug. 16, 1994
Applicant:
Inventors:
Boaz Eitan, Ranana, IL;
Alexander Shubat, Fremont, CA (US);
Assignee:
WaferScale Integration, Inc., Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257378 ; 257903 ; 365154 ; 365177 ; 365182 ;
Abstract
An SRAM cell includes an open-base, bipolar transistor serving as a load device and one pull-down transistor having an associated leakage current. The amplification .beta. of the bipolar transistor controls the amount of load current through the bipolar transistor. The bipolar transistor provides the necessary load current to ensure the SRAM cell maintains its logic state.