The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1995
Filed:
Sep. 14, 1993
Kazuoki Matsugatani, Kariya, JP;
Takashi Taguchi, Anjo, JP;
Yoshiki Ueno, Okazaki, JP;
Tadashi Hattori, Okazaki, JP;
Nippondenso Co., Ltd., Kariya, JP;
Abstract
A pseudomorphic HEMT of a structure which prevents the distribution of 2DEG in the channel layer from being concentrated near the hetero-interface relative to a doping layer and which, at the same time, enables the thickness of the channel layer to which distortion is imparted to be decreased. In an n-InAlAs/InGaAs pseudomorphic structure grown on an InP substrate 1, an InGaAs spacer layer 4 having an In composition ratio smaller than that of an InGaAs channel layer 3 is inserted in an InAlAs/InGaAs hetero-interface. The InGaAs channel layer 3 has an In composition ratio of 0.80 to exhibit a high mobility. Another InAlAs buffer layer 2, spacer layer 5 and doping layer 6 have an In composition ratio of 0.52 which is in lattice-match with the substrate, and InGaAs spacer layer 4 and cap layer 7 have an In composition ratio of 0.53 which is in lattice-match with the substrate. This constitution makes it possible to control the two-dimensional electron gas and to further increase the mobility.