The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1995
Filed:
Apr. 14, 1994
Teh Y Tan, Chapel Hill, NC (US);
Gary E McGuire, Chapel Hill, NC (US);
William T Lynch, Apex, NC (US);
Duke University, Durham, NC (US);
MCNC, Triangle Park, NC (US);
Abstract
A method of forming a metal-disilicide (MSi.sub.2) film from a silicon-on-insulator (SOI) substrate having an insulating underlayer and a silicon outerlayer includes the formation of a first capping layer on a portion of the silicon outerlayer. The first capping layer preferably includes titanium and a preselected metal (M) such as cobalt. A step is then performed to convert a first portion of the silicon outerlayer to metal-disilicide. This step is preferably accomplished by a rapid thermal annealing step. Thereafter, a second capping layer is formed on the metal-disilicide layer. The second capping layer preferably includes titanium and metal-monosilicide (MSi). Next, a step is performed to convert a second portion of the silicon outerlayer, beneath the first portion, to metal-disilicide while preventing phase-reversal of the already formed metal-disilicide layer to metal-monosilicide. This step is preferably accomplished by a rapid thermal annealing step as well. The method can preferably be used to form low resistance metal-disilicide contacts to active regions of SOI electronic devices.