The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 1995
Filed:
Aug. 19, 1993
Fujitsu Limited, Kawasaki, JP;
Abstract
A process for forming a resist mask pattern includes the steps of forming a resist layer of organic material in a multilevel resist process on a layer to be etched, and selectively etching a planarizing lower layer used in the resist layer by using an etching gas of oxygen under a plasma condition, in which a compound gas of at least one element selected from the group consisting of B, Si, Ti, Al, Mo, W and S is added to the etching gas. For example, the compound gas comprises BCl.sub.3, BH.sub.3, TiCl.sub.4, S.sub.2 Cl.sub.2, SiCl.sub.4 or the like. During the etching, a compound oxide, e.g., B.sub.2 O.sub.3, SiO.sub.2 or the like, is deposited on sidewalls of the lower layer to form a protective layer which prevents undercutting.