The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1995
Filed:
Apr. 11, 1994
Applicant:
Inventors:
Assignees:
Stanley Electric Co., Ltd., Tokyo, JP;
Kanagawa Academy of Science and Technology, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; H01L / ;
U.S. Cl.
CPC ...
1566371 ; 156345 ; 252 792 ;
Abstract
Group II-VI compound semiconductor crystal containing Zn as group II element or mixed crystal containing the compound semiconductor crystal is etched by an etchant made of H.sub.2 SO.sub.4 aqueous solution dissolved with potassium permanganate KMNO.sub.4. Preferably, an etchant is moved round in a cylindrical vessel by a stirrer, and group II-VI compound semiconductor wafers are held by a jig, disposed generally in parallel with the flow of the etchant, immersed into the etchant, and mirror-etched.
Okuno, Yasuo. (1995). Wet treatment adapted for mirror etching znse (U.S. Patent No. 5445706). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5445706
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile