The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 1995
Filed:
Nov. 12, 1993
Applicant:
Inventors:
Hiroshi Kimura, Tokyo, JP;
Toshiyuki Matsui, Tokyo, JP;
Takeshi Suzuki, Zushi, JP;
Kazuo Mukae, Yokosuka, JP;
Akihiko Ohi, Yokosuka, JP;
Assignee:
Fuji Electric Co., Ltd., , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; B05D / ; H01B / ;
U.S. Cl.
CPC ...
505193 ; 257 35 ; 257 36 ; 257 39 ; 505234 ; 505237 ; 505238 ; 505239 ; 427 62 ; 427 63 ;
Abstract
A superconducting transistor having a source region and a drain region are formed by a YBCO film on a barrier layer, which is composed of a PBCO film formed on an STO substrate. A gate electrode is disposed on the thinner wall at the back of the STO substrate. In a superconducting transistor so constructed the electric field created by the gate voltage works effectively at an interface with the barrier layer, more carriers can be drawn out relative to the applied gate voltage, and it becomes possible for a large superconduction current to flow.