The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 1995
Filed:
Feb. 12, 1993
Applicant:
Inventors:
Assignees:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Mitsubishi Materials Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 24 ; 437 62 ;
Abstract
A polysilicon or amorphous Si layer is formed on a surface of a silicon substrate. Oxygen ions are implanted into the silicon substrate through the polysilicon layer, and an SiO.sub.2 film is formed in the silicon substrate at a position in a prescribed depth from the surface of silicon substrate. A heat treatment is performed to a silicon layer between the polysilicon layer and the SiO.sub.2 film, thereby providing an SOI layer with improved crystal quality.
Quick Actions:
Nakai, Tetsuya. (1995). Method of manufacturing substrate having semiconductor on insulator (U.S. Patent No. 5441899). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5441899
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