The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1995
Filed:
Dec. 20, 1993
Alex Shubat, Fremont, CA (US);
Boaz Eitan, Ra'anana, IL;
Waferscale Integration, Inc., Fremont, CA (US);
Abstract
There is provided an EPROM array including columns of EPROM cells, three types of diffusion bit lines, two types of metal lines and two types of select transistors. The metal lines are formed of metal 1 lines and metal 2 lines, where the metal 1 lines are formed into segmented lines and continuous lines and the metal 2 lines are continuous. The diffusion bit lines are formed of short, medium and continuous lines, where the medium length diffusion lines are associated with one segmented metal 1 line and one metal 2 line, the continuous lines are associated with one continuous metal 1 line and the short bit lines are formed of short segments and are not associated with metal lines. The diffusion lines repeat in the following order: medium length, short, continuous, short. One type of select transistor connects one short diffusion line to one metal 1 line and the second type of select transistor connects one segmented metal 1 line to one metal 2 line. Each column of EPROM cells are located between two neighboring diffusion lines.