The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1995
Filed:
Sep. 07, 1994
Hirokazu Oikawa, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
After forming a silicon oxide layer and an amorphous silicon layer on a GaAs substrate in stacking manner, a gate electrode forming opening portion is formed by RIE etching. Then, by selectively removing only the amorphous silicon layer at the portion contacting with the opening portion at the side of the source electrode, a WSi.cndot.TiN.cndot.Pt layer is formed within the opening portion. Subsequently, after applying an organic photoresist layer, an entire surface is etched back to remove at least the WSi.cndot.TiN.cndot.Pt layer above the amorphous silicon layer. Then, by using the WSi.cndot.TiN.cndot.Pt layer remaining in the opening portion as a plating electrode, an Au layer is plated to form a reversed L-shaped gate electrode with an overhanging portion only extending toward the source electrode.