The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1995
Filed:
Jun. 28, 1994
Applicant:
Inventors:
Marius K Orlowski, Austin, TX (US);
Karl Wimmer, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 72 ;
Abstract
Field isolation regions are formed using oxidation-resistant spacers or plugs that completely fill trenches within a semiconductor substrate prior to forming the field isolation regions. The spacers or plugs help to reduce encroachment of the field isolation regions under the spacers or plugs. The structure used as an oxidation mask for the field isolation process may include a silicon-containing member that is thicker than an overlying oxidation-resistant member. The thicker silicon-containing member may be capable of tolerating higher stress before defects in an underlying pad layer or substrate are formed.