The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1995
Filed:
Nov. 18, 1993
Cheol-hong Kim, Suwon, KR;
Woo-sung Sung, Suwon, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method for forming a mask pattern using a multi-layer photoresist film process is disclosed. The processing is simplified from known processes by using a silylated photoresist film. A first photoresist layer is formed on substrate and part of the surface of the photoresist layer is silylated to thereby form a silylation layer. Then, a second photoresist layer is formed on the silylation layer, which is then exposed through the photo mask having a predetermined pattern. A second photoresist pattern is then formed after development. Then, a silylation layer pattern is formed by etching-back the silylation layer using the second photoresist pattern as an etching mask. The silylation pattern is then oxidized, and the first photoresist layer is etched using the oxidized silylation pattern, thereby forming a first photoresist pattern. A resolution increasing effect can be maintained using the two layer photoresist film structure without the need for an intermediate oxide film. Thus, the process is simplified and less undesired polymers are generated.