The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 1995

Filed:

Jun. 09, 1994
Applicant:
Inventors:

Peter M Rentzepis, , US;

John P Rentzepis, Irvine, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G21K / ;
U.S. Cl.
CPC ...
378 34 ; 378136 ;
Abstract

A photoemissive photocathode, being a metal with a low work function and preferably tantalum-surfaced cesium-antimonide, is illuminated with pulses of 5320 .ANG. laser light, typically 20 psec at a 20 Hz repetition rate, to emit electrons by the photoelectric effect. The emitted electrons are accumulated in a spatial region near the photocathode by a grid electrode. The same laser pulses activate a semiconductor switch, normally an LiTaO.sub.3 crystal doped with 2.24% Cu, to apply a high voltage, typically 100 Kv, between the photocathode and an anode. The accumulated electrons are accelerated, and focused, as an electron beam that strikes the anode, typically in a focal spot of less than 0.5 mm diameter. Time-resolved x-ray pulses, typically K band of 20 picoseconds duration with 4-10 microjoules energy each, are produced. A laser-induced pulsed wide-area table-top-size embodiment of the x-ray source reliably generates a 1-10 mW/cm.sup.2 flux of hard, 0.1-1 nm, x-rays from picosecond duration laser pulses, and a 20-40 mW/cm.sup.2 flux of x-rays from 20 ns, 193 nm laser pulses at a pulse repetition rate of 300 Hz minimum, 1,000 Hz typical. The x-ray generation is uniform over a large 20 cm.sup.2 anode area. A mask is placed in direct contact with the anode for lithography.


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