The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 1995
Filed:
Sep. 08, 1993
Ichiro Murai, Tokyo, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
A MOS-type semiconductor device having an LDD structure. The device includes a silicon substrate of a first conductivity type. An insulating film is formed on a main surface of the silicon substrate. A gate electrode made of polycrystalline silicon containing impurities at a first concentration is formed on the insulating film. Sidewall spacers made of polycrystalline silicon containing impurities at a second concentration different from the first concentration are formed at both sides of the gate electrode. Impurity diffusion layers are formed in the main surface of the semiconductor substrate at respective regions thereof where source and drain of the MOS-type semiconductor device are to be formed. Each of the impurity diffusion layers includes a low concentration diffusion layer disposed at a first portion of one of the regions and a high concentration diffusion layer disposed at a second portion other than the first portion of the one region. The first portion extends between a first end substantially corresponding to a side of the gate electrode contiguous with one of the sidewall spacers and a second end substantially corresponding to an outer side of the one sidewall spacer remote from the side of the gate electrode so that a boundary line between the first portion and the second portion is substantially aligned with the outer side of the one sidewall spacer.