The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 1995
Filed:
Oct. 15, 1993
Kenneth D Saul, Palo Alto, CA (US);
Valerie A Bach, Philomath, OR (US);
Hewlett-Packard Corporation, Palo Alto, CA (US);
Abstract
A multi-layer structure, typically semiconductor device, is etched according to a process of the present invention, and meets the above-described existing needs by focusing on the post-etch treatment of the damaged, etched semiconductor device formed thereby. This post-etch treatment is accomplished by exposing the damaged silicon to a forming-gas downstream plasma which results in substantially increased oxide regrowth and significantly higher level of gate oxide quality. In conducting the process of the subject invention from about 1% up to about 15% by volume of H.sub.2, and from about 85 up to about 99% by volume of N.sub.2 are preferably employed as the post etching forming-gas plasma.