The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 1995
Filed:
Oct. 30, 1992
Applicant:
Inventors:
Brad W Scharf, Winchester, MA (US);
Faran Nouri, Palo Alto, CA (US);
Shaheen Mohamedi, Chandler, AZ (US);
Assignee:
Analog Devices, Incorporated, Norwood, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257401 ; 257402 ; 257404 ; 257655 ; 257657 ;
Abstract
An MOS transistor wherein the channel between the source and drain is formed with two regions having different dopant concentrations. The region adjacent the source has a normal concentration, while that adjacent the drain has a reduced dopant concentration. This reduces the degrading effects of hot carrier injection, thereby extending the life of the transistor.