The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 1995

Filed:

Sep. 22, 1993
Applicant:
Inventors:

Koichi Tsuda, Yokosuka, JP;

Toshiyuki Matsui, Tokyo, JP;

Takeshi Suzuki, Zushi, JP;

Hiroshi Kimura, Tokyo, JP;

Takashi Ishii, Yokosuka, JP;

Akihiko Ohi, Yokosuka, JP;

Kazuo Mukae, Yokosuka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01B / ; B05D / ;
U.S. Cl.
CPC ...
505193 ; 257 34 ; 257 36 ; 257 39 ; 505237 ; 505779 ; 427 62 ; 427 63 ;
Abstract

A superconducting transistor with superior withstand voltage having source region and a drain region formed of oxide superconductors 3, a PrBa.sub.2 Cu.sub.3 O.sub.7-x layer 2 or an ScBa.sub.2 Cu.sub.3 O.sub.7-x layer 2 forming an intermediate region sandwiched by the source and drain regions. The regions are disposed on a substrate 1. An insulation layer 4 is disposed on the intermediate region. A transistor uses the intermediate region as an insulator when the gate is turned off, and as a superconductor when the gate is turned on.


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