The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 1995
Filed:
Jun. 06, 1994
Applicant:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437195 ; 437228 ; 437978 ; 437981 ; 148D / ;
Abstract
A method of forming a metal via on a semiconductor substrate having a metal layer and a dielectric layer on the metal layer, which uses an intermediate mask layer as a mask in forming the metal via instead of using a photoresist as a mask. Therefore, the spin-on glass (SOG) layer in the dielectric layer is not exposed to plasma or solvent, thereby preventing the formation of polymers which cause poor step coverage and sometimes even contact failure in the metal via.