The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 1995
Filed:
Nov. 10, 1992
Applicant:
Inventors:
Takao Yonehara, Atsugi, JP;
Masaharu Ozaki, Shimomaruko, Ohta-ku, Tokyo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 83 ; 437 89 ; 437 90 ; 437106 ; 437915 ; 437 57 ; 148D / ;
Abstract
A semiconductor device has an insulated gate type transistor. The insulated gate type transistor is formed on an insulating surface of substrate. The insulated gate type transistor is formed in a single crystal layer which is grown from a single nucleus formed on nucleation region which is provided on said insulating surface, which has sufficiently greater nucleation density than material of said insulating surface and which has sufficiently small size so that only one nucleus can be grown.
Yonehara, Takao. (1995). Method for producing a three-dimensional semiconductor device (U.S. Patent No. 5422302). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5422302
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile