The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 1995
Filed:
Nov. 30, 1993
Applicant:
Inventors:
Assignee:
Siliconix incorporated, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257402 ; 257392 ; 257655 ;
Abstract
A bidirectional current blocking lateral power MOSFET including a source and a drain which are not shorted to a substrate, and voltages that are applied to the source and drain are both higher than the voltage at which the body is maintained (for an N-channel MOSFET) or lower than the voltage at which the body is maintained (for a P-channel MOSFET). The on-resistance of the MOSFET is improved by decreasing the conductance of the epi region and disposing a thin threshold adjust layer on the surface of the substrate between the source and drain regions. An optional second punchthrough preventing implant is disposed on the substrate surface.