The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 1995
Filed:
Sep. 22, 1994
Kensuke Okonogi, Tokyo, JP;
Tsukasa Ohoka, Shiga, JP;
NEC Corporation, Tokyo, JP;
Abstract
According to this invention, there is provided a method of manufacturing a semiconductor device, including the steps of anisotropically etching a surface of an n-type monocrystalline silicon substrate having the (100) plane to form a V-shaped isolation groove having a depth d.sub.1, performing ion implantation and performing annealing and diffusion to a surface of the V-shaped isolation groove to form an n.sup.+ -type buried layer, depositing a silicon dioxide film having a thickness d.sub.2 on a surface of the n.sup.+ -type buried layer, forming a polycrystalline silicon film on a surface of the silicon dioxide film, abrading and polishing the polycrystalline silicon film to have a thickness d.sub.3, adhering a monocrystalline silicon support substrate having a thickness d.sub.4 to a polished surface of the polycrystalline silicon film at room temperature in the atmospheric air, abrading and polishing a lower surface of the n-type monocrystalline silicon substrate having the V-shaped isolation groove to expose the silicon dioxide film at a bottom portion of the V-shaped isolation groove on the lower surface and to form an island-like monocrystalline silicon film, wherein the thicknesses d.sub.1, d.sub.2, d.sub.3, and d.sub.4 are set to be 50 to 60 .mu.m, 1 to 3 .mu.m, 0 to 30 .mu.m, and 350 to 450 .mu.m, respectively.