The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 1995

Filed:

Aug. 25, 1993
Applicant:
Inventors:

Shinichi Watabe, Itami, JP;

Tadatomo Kazuyuki, Itami, JP;

Hiroaki Okagawa, Itami, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 95 ; 257 96 ; 257 97 ; 257 98 ; 372 50 ; 372 99 ;
Abstract

A semiconductor light emitting element comprising a semiconductor substrate having a lower electrode on its back, a pn junction, a first light reflecting layer disposed between the substrate and the pn junction, an upper electrode, and a second light reflecting layer disposed between the pn junction and the upper electrode, the second light reflecting layer being capable of substantially reflecting the light heading toward the upper electrode, which preferably has, between the pn junction and the second light reflecting layer, a semiconductor layer having a wider bandgap than that of a light emitting layer formed by said pn junction. The semiconductor light emitting element of the invention is advantageous in that the light absorption in the upper electrode can be inhibited to permit efficient output of the light heading toward the upper electrode from the element, and luminance can be greatly increased by the effective output of the light from the element.


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