The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 1995
Filed:
Aug. 12, 1994
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A method of forming a metallurgy system on a semiconductor substrate is provided. A first conformal layer of SiO.sub.2 is deposited on the substrate using plasma enhanced chemical vapor deposition (PECVD) techniques. Subsequently a non-conformal organic layer is deposited by spin-on-glass (SOG) techniques over the first layer, and heated to smoothen the surface. The organic SOG deposited layer is then subjected to a N.sub.2 plasma environment and a second conformal layer of SiO.sub.2 is deposited, and then vias etched through the layers. The resist layer used to define vias is removed by an O.sub.2 plasma and the device metallurgy completed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile