The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 1995

Filed:

Dec. 01, 1993
Applicant:
Inventors:

Hitoshi Atari, Kyoto, JP;

Kazuhiro Kuchimachi, Kokubu, JP;

Assignee:

Kyocera Corporation, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23Q / ;
U.S. Cl.
CPC ...
279128 ; 361234 ;
Abstract

An electrostatic chuck comprising a chucking body of a dielectric ceramics and an electrostatic inner electrode embedded in the chuck (first invention), the ceramics having a volume resistivity value not more than 10.sup.13 .OMEGA.cm at a high temperature not less than 250.degree. C. This electrostatic chuck can properly chuck, fix, carry and correct wafers even at a high temperature not less than 250.degree. C. in CVD, PVD or high temperature etching apparatuses. An electrostatic chuck comprising a chucking body of a single-crystalline sapphire and an electrostatic inner electrode embedded in the chuck (second invention). This electrostatic chuck is characterized by extremely small leak current, high mechanical strength and strong chucking force even in the temperature range of room temperature to 500.degree. C. and in the voltage range of 500 to 2000 V. With this electrostatic chuck, objects to be chucked, such as silicon wafers, are less contaminated.


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