The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 1995
Filed:
Jun. 08, 1992
Herbert Goronkin, Tempe, AZ (US);
Jun Shen, Phoenix, AZ (US);
Saied N Tehrani, Scottsdale, AZ (US);
X Theodore Zhu, Chandler, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by barrier layers comprising wide bandgap material (18) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is coupled a P-type drain region (22b). Each channel is also coupled to an N-type source region (25b). With appropriate gate bias on a gate electrode (17), quantized energy levels in the channels (12, 14, 16) are aligned providing peak current flow by electrons tunneling from the conduction band of one or more N-channels (12, 16) to the valence band of the P-channel (14).