The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 1995
Filed:
May. 14, 1993
Charles L Turner, Boise, ID (US);
Darrin C Malinowski, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
There is a slotted cantilever diffusion tube system with a temperature insulating baffle system and a distributed gas injector system. Uniquely, there is an enhanced system that decreases the defects of wafers due to temperature, pressure, and concentration fluctuations in a low pressure chemical vapor deposition (LPCVD) process for fabricating IC wafers. Specifically, there is a cantilevered diffusion quartz tube system (12, 14) that has at least one temperature and pressure barrier baffle (28) placed between the lower temperature end (27) of the tube and the wafers under process (18). Additionally, there are at least two deposition gas injection exhaust ports (30, 32, 34) distributed along the length of the quartz tube near the wafers to assure that there is a relatively uniform concentration of diffusion gas in the heating chamber (17). Moreover, the tube has a pressure sensor (20) having its gauges on the outside of the tube and having the sensor extending into and through the baffle section and into the wafer heating chamber. Uniquely, the quartz tube (12) has gas couplings (40), located between flange ring's ( 22) and an oven's (14) abutting surfaces (36, 38), designed to allow for sealable and flexible attachment between the two surfaces.