The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 1995
Filed:
Dec. 02, 1992
Shin-Etsu Handatai Co., Ltd., Tokyo, JP;
Abstract
Disclosed are a light-emitting semiconductor device substrate and a method of manufacturing the same. The substrate is prepared by causing a Ga.sub.1-x Al.sub.x As compound semiconductor single crystalline thick-film layer having a first AlAs mole fraction and a low Al containing and oxidation-delaying Ga.sub.1-y Al.sub.y As compound semiconductor single crystalline thin film serving as a surface protective layer and having a second AlAs mole fraction to be sequentially grown on a GaAs crystal substrate. The method comprises the step of causing the thick-film layer and the thin film to be sequentially grown on the GaAs crystal substrate. The GaAs crystal substrate is removed after sequential epitaxial growth of the thick-film layer and thin film on the GaAs crystal substrate.