The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 1995
Filed:
Sep. 01, 1992
Hidekazu Okuhira, Hachioji, JP;
Tetsuo Ono, Kokubunji, JP;
Susumu Hiraoka, Kokubunji, JP;
Keizo Suzuki, Kodaira, JP;
Junji Shigeta, Fuchu, JP;
Hiroshi Masuda, Hachioji, JP;
Mitsuhiro Mori, Ibaragi, JP;
Takuma Tanimoto, Kokubunji, JP;
Shinichi Nakatsuka, Hino, JP;
Katsuhiko Mitani, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A method may be used to dry etch a sample including a plurality of regions different from each other in the photo-absorption of a light having a specified wavelength using an etching gas plasma. The method is capable of selectively etching the desired material from a plurality of materials having different types of band gap energies or from a plurality of materials having different band gap energies. The method includes a step of irradiating a light having the specified wavelength on the sample for reducing an etching rate of a region having a large photo-absorption coefficient to the light, thereby selectively etching a region having a small photo-absorption coefficient to the light.