The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 1995
Filed:
May. 16, 1994
Applicant:
Inventors:
Hiroyuki Ito, West Sussex, GB;
Jonathan England, West Sussex, GB;
Frederick Plumb, West Sussex, GB;
Ian Fotheringham, West Sussex, GB;
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
25049221 ; 250251 ;
Abstract
A plasma flood system for use in the implantation of ions in a semiconductor substrate comprising a plasma and low energy electron source for developing a plasma containing low energy electrons for magnetic field enhanced transmission to a negatively biased, magnetic field assisted electron confinement tube and into an ion beam flowing axially through the tube to the semiconductor substrate for self regulating and neutralizing positive charges on the surface of the substrate without causing significant negative charging of the substrate.