The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 1995

Filed:

Jul. 13, 1994
Applicant:
Inventors:

Krishna G Sachdev, Hopewell Junction, NY (US);

Premlatha Jagannathan, Patterson, NY (US);

Robert N Lang, Pleasant Valley, NY (US);

Harbans S Sachdev, Hopewell Junction, NY (US);

Ratnam Sooriyakumaran, Fishkill, NY (US);

Joel R Whitaker, Port Ewen, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F / ; G03F / ; G03F / ;
U.S. Cl.
CPC ...
430323 ; 430166 ; 430190 ; 430193 ; 430313 ; 430317 ; 430326 ;
Abstract

A method is provided for forming a microlithographic relief image having a width of less than one half micron in a bilayer resist composition. The resist composition comprises a single component, silicon-containing photoimageable layer and a polymeric underlayer having a high optical density and a refractive index similar to the refractive index of the overlaying resist. The method provides for the formation of a relief image in the top layer using an i-line (365 nm) or deep ultra violet (170 to 300 nm) light source, followed by O.sub.2 RIE transfer of the relief image into the polymeric underlayer.


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