The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 1995
Filed:
Aug. 03, 1992
John Parry, Grass Valley, CA (US);
Richard D Davis, Nevada City, CA (US);
Silicon Systems, Inc., Tustin, CA (US);
Abstract
An improved method for current limiting applications to control the current through MOSFETs or IGBTs. An amplifier having a single, high-frequency pole is used to drive the large gate capacitance of a power MOSFET or IGBT. The current in the power transistor generates a negative feedback voltage in a sensing resistor. This feedback voltage is compared with a reference voltage to determine the output voltage of the amplifier. This provides greater stability for driving IGBT transistors, and the actual frequency response is only dependent upon the poles generated by the power transistor and its load. The current in the transistor ramps up to a value determined by the reference voltage, and then settles to a constant value with little or no overshoot or oscillation.