The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 1995
Filed:
Feb. 28, 1992
Applicant:
Inventors:
Frederick Schmid, Marblehead, MA (US);
Chandra P Khattak, Danvers, MA (US);
Vladimir Gorbulev, Stoughton, MA (US);
Assignee:
Crystal Systems, Inc., Salem, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 13 ; 117 25 ; 117210 ;
Abstract
A high temperature heat exchanger is used with the Czochralski crystal growing method to control the heat extraction from crystal silicon ingots as they are grown. The high temperature heat exchanger also acts as a shaping die so that silicon bars, or ingots, of various shapes, including square, circular, rectangular or ribbon, can be produced by shaping during the growth stage.